Fabrication and characterisation of tellurite planar waveguides

Tellurite glasses, which contain Tellurium dioxide as the main component, have some remarkable optical properties which are well recognised and exploited in the bulk optics and fibre fields. They include a high acousto-optic figure of merit, wide mid infrared transparency, the highest optical nonlinearity amongst oxides, and excellent rare earth hosting, etc. Despite these attractive properties, until now, no one has succeeded in fabricating low loss planar waveguides in these materials. This work develops high quality optical planar waveguides in Tellurium dioxide for the first time. The project investigates the materials science for optical Tellurium dioxide films and discovers an appropriate waveguide fabrication method. The thin films have been fabricated by reactive radio frequency magnetron sputtering using a Tellurium target in an oxygen and argon atmosphere. Propagation losses at 1550nm in the planar films are 0.1dB/cm or lower in stoichiometric composition. The properties of films have been also found to be stable with thermal annealing up to 300 degree Celsius. Plasma etching of tellurite glasses has been systematically studied. High quality etching of Tellurium dioxide and chalcogenide glass films has been demonstrated with a Methane/Hydrogen/Argon gas mixture. As a result, a fabrication recipe which produces low loss (0.1dB/cm) planar waveguides has been discovered. The nonlinear coefficient of the sputtered TeO2 has been characterised by self-phase modulation (SPM) experiments and the second order nonlinear coefficient has been measured to be around 25 times that of silica. Significant signal conversion, -4dB, has achieved with large bandwidth of 30nm in the four-wave mixing (FWM) experiment pumped at 1550nm in a slightly normal dispersion waveguide. Erbium doped Tellurium oxide thin films have also been fabricated by co-sputtering of Erbium and Tellurium targets into an Oxygen and Argon atmosphere. The obtained films have been found to have good properties for Erbium doped waveguide amplifiers. The Erbium concentration can be controlled within the range of interest with Erbium/Tellurium ratios ranging from 0.1% to 3% or more. The 1.5 micrometre photoluminescence properties of the films are excellent with effective bandwidth of more that 60nm and intrinsic lifetime of order of 3ms. Despite the fact that there was OH contamination in the films, single mode Erbium doped waveguide amplifiers with high internal gain have been successfully obtained. The 1480nm pumped amplifier achieved internal gain from below 1520nm to beyond 1600nm. The peak gain of 2.8dB/cm and 40nm 3dB gain bandwidth have been accomplished. These results are a major stepping stone towards ""system-on-chip"" optical applications for telecom and mid infrared optics given the multifunctional nature of tellurite materials. -- provided by Candidate

980nm pumped erbium doped tellurium oxide planar rib waveguide laser and amplifier with gain in S, C and L band

A thin film based erbium doped tellurium oxide (TeO₂) waveguide amplifier producing gain from 1500nm to 1640nm when pumped at 980nm is demonstrated. At measured internal gains exceeding 14dB lasing due to end facet reflection set in producing the first tellurite waveguide laser. High gains were observed despite significant upconversion, whose impact appears to be mitigated to some extent by residual OH contamination. The device displayed no photosensitive effects from either the high pumping intensities used or the intracavity intensity at 1550nm.This work was funded by the Australian Research Council mainly via Discovery Project DP0987056 and partly through the Centre for Ultrahigh bandwidth Devices for Optical Systems (CUDOS) CE110001018

The observation of photon echoes from evanescently coupled rare-earth ions in a planar waveguide

We report the measurement of the inhomogeneous linewidth, homogeneous linewidth and spin state lifetime of Pr3+ ions in a novel waveguide architecture. The TeO2 slab waveguide deposited on a bulk Pr3+:Y2SiO5 crystal allows the 3H4 - 1D2 transition of Pr3+ ions to be probed by the optical evanescent field that extends into the substrate. The 2 GHz inhomogeneous linewidth, the optical coherence time of 70 +- 5 us, and the spin state lifetime of 9.8 +- 0.3 s indicate that the properties of ions interacting with the waveguide mode are consistent with those of bulk ions. This result establishes the foundation for large, integrated and high performance rare-earth-ion quantum systems based on a waveguide platform.Comment: 5 pages, 5 figure

Coding for Racetrack Memories

Racetrack memory is a new technology which utilizes magnetic domains along a nanoscopic wire in order to obtain extremely high storage density. In racetrack memory, each magnetic domain can store a single bit of information, which can be sensed by a reading port (head). The memory has a tape-like structure which supports a shift operation that moves the domains to be read sequentially by the head. In order to increase the memory's speed, prior work studied how to minimize the latency of the shift operation, while the no less important reliability of this operation has received only a little attention. In this work we design codes which combat shift errors in racetrack memory, called position errors. Namely, shifting the domains is not an error-free operation and the domains may be over-shifted or are not shifted, which can be modeled as deletions and sticky insertions. While it is possible to use conventional deletion and insertion-correcting codes, we tackle this problem with the special structure of racetrack memory, where the domains can be read by multiple heads. Each head outputs a noisy version of the stored data and the multiple outputs are combined in order to reconstruct the data. Under this paradigm, we will show that it is possible to correct, with at most a single bit of redundancy, $d$ deletions with $d+1$ heads if the heads are well-separated. Similar results are provided for burst of deletions, sticky insertions and combinations of both deletions and sticky insertions

Codes for Correcting Asymmetric Adjacent Transpositions and Deletions

Codes in the Damerau--Levenshtein metric have been extensively studied recently owing to their applications in DNA-based data storage. In particular, Gabrys, Yaakobi, and Milenkovic (2017) designed a length-$n$ code correcting a single deletion and $s$ adjacent transpositions with at most $(1+2s)\log n$ bits of redundancy. In this work, we consider a new setting where both asymmetric adjacent transpositions (also known as right-shifts or left-shifts) and deletions may occur. We present several constructions of the codes correcting these errors in various cases. In particular, we design a code correcting a single deletion, $s^+$ right-shift, and $s^-$ left-shift errors with at most $(1+s)\log (n+s+1)+1$ bits of redundancy where $s=s^{+}+s^{-}$. In addition, we investigate codes correcting $t$ $0$-deletions, $s^+$ right-shift, and $s^-$ left-shift errors with both uniquely-decoding and list-decoding algorithms. Our main contribution here is the construction of a list-decodable code with list size $O(n^{\min\{s+1,t\}})$ and with at most $(\max \{t,s+1\}) \log n+O(1)$ bits of redundancy, where $s=s^{+}+s^{-}$. Finally, we construct both non-systematic and systematic codes for correcting blocks of $0$-deletions with $\ell$-limited-magnitude and $s$ adjacent transpositions

Stoichiometric Low Loss Tellurium Oxide Thin Films for Photonic Applications

Stoichiometric low loss Tellurium Oxide, TeO2, films have been produced by reactive RF sputtering. TeO2 films with propagation loss below 0.1dB/cm at 1550nm have been achieved in as deposited films